A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2

A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3 ) over the temperature range from -22 C to 85 C. Fabricated in a baseline 65 nm CMOS technology, the frequency reference circuit occupies 0.11 mm

Hybrid ADCs, Smart sensors for the IoT, and Sub-1V and Advanced node analog circuit design: Advances in Analog Circuit Design 2017

This book is based on the 18 tutorials presented during the 26th workshop on Advances in Analog Circuit Design. Expert designers present readers with information about a variety of topics at the frontier of analog circuit design, with specific contributions focusing on hybrid ADCs, smart sensors for the IoT, sub-1V and advanced-node analog circuit design. This book serves as a valuable reference to the state-of-the-art, for anyone involved in analog circuit research and development

A Hybrid ADC for High Resolution: The Zoom ADC

This paper presents a dynamic zoom ADC for audio applications. It achieves 109-dB DR, 106-dB SNR, and 103-dB SNDR in a 20-kHz bandwidth, while dissipating 1.12 mW and occupying only 0.16 mm2 in 0.16-μm CMOS. This translates to state-of-the-art energy and area efficiency. In this paper, the system- and circuit-level design of the ADC will be presented

5.7 A MEMS Coriolis Mass Flow Sensor with 300 μ g/h/√Hz Resolution and ± 0.8mg/h Zero Stability

Precision flow sensors are widely used in the pharmaceutical, food, and semiconductor industries to measure small amounts (<1 gram/hour) of liquids and gases. MEMS thermal flow sensors currently achieve state-of-the-art performance in terms of resolution, size, and power consumption [1, 3]. However, they only measure volumetric flow, and so must be calibrated for use with specific liquids [1] or gases [2, 3]. In contrast, Coriolis flow sensors measure mass flow and thus do not need calibration for specific fluids. Furthermore, their resonance frequency can be used as a measure of fluid density. These features enable significant size, cost, and complexity reductions in low-flow microfluidic systems. Although much progress has been made, miniature [4] and MEMS [5- 7] Coriolis mass flow sensors are still outperformed by their thermal counterparts, especially in terms of resolution and long-term stability

Effects of packaging and process spread on a mobility-based frequency reference in 0.16-μm CMOS

In this paper, we explore the robustness of frequency references based on the electron mobility in a MOS transistor by implementing them with both thin-oxide and thick-oxide MOS transistors in a 0.16-μm CMOS process, and by testing samples packaged in both ceramic and plastic packages. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for applications requiring fully integrated solutions, such as Wireless Sensor Networks. Over the temperature range from -55°C to 125°C, its frequency spread is less than ±1% (3σ) after a one-point trim. Fabricated in a baseline 0.16-μm CMOS process, the 50 kHz frequency reference occupies 0.06 mm2 and, at room temperature, its consumption with a 1.2-V supply is less than 17 μW

CMOS-Compatible Carbon Dioxide Sensors

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A MEMS Coriolis Mass Flow Sensing System with Combined Drive and Sense Interface

This paper describes an interface circuit for a MEMS Coriolis mass flow sensor that combines both drive and sense circuitry. The MEMS sensor consists of a suspended resonant tube, which is read-out by comb capacitors and driven into oscillation by current flowing through a drive coil in a magnet field. The interface circuit comprises a low-noise front-end that performs capacitance-to-voltage (C/V) conversion, and a drive-loop with automatic amplitude control. Drive motion can also be detected from the output of the front-end, allowing both drive and sense functions to be combined. The front-end is chopped to mitigate its 1/ f noise. When implemented with commercial off-the-shelf (COTS) components, the proposed interface draws 250 mA from a single 5-V supply. Mass flow measurements with Nitrogen gas (N 2 ) show that the sensor's drive frequency drifts by less than 1 mHz (rms) per hour, while its zero stability is less than 2.6 mg/h during an 80s measurement